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GeSn p-i-n photodetector for all telecommunication bands detection
Using a 820 nm-thick high-quality Ge0.97Sn0.03 alloy film grown on Si(001) by molecular beam epitaxy, GeSn p-i-n photodectectors have been fabricated. The detectors have relatively high responsivities, such as 0.52 A/W, 0.23 A/W, and 0.12 A/W at 1310 nm, 1540 nm, and 1640 nm, respectively, under a 1...
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| Published in: | Optics express 2011-03, Vol.19 (7), p.6400-6405 |
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| Main Authors: | , , , , , , , , , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c3520-24b312ca5771183cbc0d8cd56a56cfcecb50f877b34fbf0fdf46643d37719d7d3 |
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| cites | cdi_FETCH-LOGICAL-c3520-24b312ca5771183cbc0d8cd56a56cfcecb50f877b34fbf0fdf46643d37719d7d3 |
| container_end_page | 6405 |
| container_issue | 7 |
| container_start_page | 6400 |
| container_title | Optics express |
| container_volume | 19 |
| creator | Su, Shaojian Cheng, Buwen Xue, Chunlai Wang, Wei Cao, Quan Xue, Haiyun Hu, Weixuan Zhang, Guangze Zuo, Yuhua Wang, Qiming |
| description | Using a 820 nm-thick high-quality Ge0.97Sn0.03 alloy film grown on Si(001) by molecular beam epitaxy, GeSn p-i-n photodectectors have been fabricated. The detectors have relatively high responsivities, such as 0.52 A/W, 0.23 A/W, and 0.12 A/W at 1310 nm, 1540 nm, and 1640 nm, respectively, under a 1 V reverse bias. With a broad detection spectrum (800-1800 nm) covering the whole telecommunication windows and compatibility with conventional complementary metal-oxide-semiconductors (CMOS) technology, the GeSn devices are attractive for applications in both optical communications and optical interconnects. |
| doi_str_mv | 10.1364/OE.19.006400 |
| format | article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_859743603</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>859743603</sourcerecordid><originalsourceid>FETCH-LOGICAL-c3520-24b312ca5771183cbc0d8cd56a56cfcecb50f877b34fbf0fdf46643d37719d7d3</originalsourceid><addsrcrecordid>eNpNkLtOw0AQRVcIREKgo0buaHCY9b7sEiITkCKlAOrVPoWR7TVeu-DvY-SAKGbmjnR0i4PQNYY1Jpze78s1LtYAnAKcoCWGgqYUcnH6Ly_QRYyfAJiKQpyjRYYpw5yLJXrcutc26dIqnfZHGIJ1gzND6BM_jarrZHC1M6FpxrYyaqhCm2jV2pjM4PRfojOv6uiujneF3p_Kt81zuttvXzYPu9QQlkGaUU1wZhQTAuOcGG3A5sYyrhg33jijGfhcCE2o1x689ZRzSiyZ-MIKS1bodu7t-vA1ujjIporG1bVqXRijzFkhKOFAJvJuJk0fYuydl11fNar_lhjkjzS5LyUu5Cxtwm-OxaNunP2Dfy2RA2o0ZtM</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>859743603</pqid></control><display><type>article</type><title>GeSn p-i-n photodetector for all telecommunication bands detection</title><source>EZB-FREE-00999 freely available EZB journals</source><creator>Su, Shaojian ; Cheng, Buwen ; Xue, Chunlai ; Wang, Wei ; Cao, Quan ; Xue, Haiyun ; Hu, Weixuan ; Zhang, Guangze ; Zuo, Yuhua ; Wang, Qiming</creator><creatorcontrib>Su, Shaojian ; Cheng, Buwen ; Xue, Chunlai ; Wang, Wei ; Cao, Quan ; Xue, Haiyun ; Hu, Weixuan ; Zhang, Guangze ; Zuo, Yuhua ; Wang, Qiming</creatorcontrib><description>Using a 820 nm-thick high-quality Ge0.97Sn0.03 alloy film grown on Si(001) by molecular beam epitaxy, GeSn p-i-n photodectectors have been fabricated. The detectors have relatively high responsivities, such as 0.52 A/W, 0.23 A/W, and 0.12 A/W at 1310 nm, 1540 nm, and 1640 nm, respectively, under a 1 V reverse bias. With a broad detection spectrum (800-1800 nm) covering the whole telecommunication windows and compatibility with conventional complementary metal-oxide-semiconductors (CMOS) technology, the GeSn devices are attractive for applications in both optical communications and optical interconnects.</description><identifier>ISSN: 1094-4087</identifier><identifier>EISSN: 1094-4087</identifier><identifier>DOI: 10.1364/OE.19.006400</identifier><identifier>PMID: 21451667</identifier><language>eng</language><publisher>United States</publisher><subject>Equipment Design ; Equipment Failure Analysis ; Germanium - chemistry ; Light ; Photometry - instrumentation ; Semiconductors ; Telecommunications - instrumentation ; Tin - chemistry</subject><ispartof>Optics express, 2011-03, Vol.19 (7), p.6400-6405</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c3520-24b312ca5771183cbc0d8cd56a56cfcecb50f877b34fbf0fdf46643d37719d7d3</citedby><cites>FETCH-LOGICAL-c3520-24b312ca5771183cbc0d8cd56a56cfcecb50f877b34fbf0fdf46643d37719d7d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27922,27923</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/21451667$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Su, Shaojian</creatorcontrib><creatorcontrib>Cheng, Buwen</creatorcontrib><creatorcontrib>Xue, Chunlai</creatorcontrib><creatorcontrib>Wang, Wei</creatorcontrib><creatorcontrib>Cao, Quan</creatorcontrib><creatorcontrib>Xue, Haiyun</creatorcontrib><creatorcontrib>Hu, Weixuan</creatorcontrib><creatorcontrib>Zhang, Guangze</creatorcontrib><creatorcontrib>Zuo, Yuhua</creatorcontrib><creatorcontrib>Wang, Qiming</creatorcontrib><title>GeSn p-i-n photodetector for all telecommunication bands detection</title><title>Optics express</title><addtitle>Opt Express</addtitle><description>Using a 820 nm-thick high-quality Ge0.97Sn0.03 alloy film grown on Si(001) by molecular beam epitaxy, GeSn p-i-n photodectectors have been fabricated. The detectors have relatively high responsivities, such as 0.52 A/W, 0.23 A/W, and 0.12 A/W at 1310 nm, 1540 nm, and 1640 nm, respectively, under a 1 V reverse bias. With a broad detection spectrum (800-1800 nm) covering the whole telecommunication windows and compatibility with conventional complementary metal-oxide-semiconductors (CMOS) technology, the GeSn devices are attractive for applications in both optical communications and optical interconnects.</description><subject>Equipment Design</subject><subject>Equipment Failure Analysis</subject><subject>Germanium - chemistry</subject><subject>Light</subject><subject>Photometry - instrumentation</subject><subject>Semiconductors</subject><subject>Telecommunications - instrumentation</subject><subject>Tin - chemistry</subject><issn>1094-4087</issn><issn>1094-4087</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNpNkLtOw0AQRVcIREKgo0buaHCY9b7sEiITkCKlAOrVPoWR7TVeu-DvY-SAKGbmjnR0i4PQNYY1Jpze78s1LtYAnAKcoCWGgqYUcnH6Ly_QRYyfAJiKQpyjRYYpw5yLJXrcutc26dIqnfZHGIJ1gzND6BM_jarrZHC1M6FpxrYyaqhCm2jV2pjM4PRfojOv6uiujneF3p_Kt81zuttvXzYPu9QQlkGaUU1wZhQTAuOcGG3A5sYyrhg33jijGfhcCE2o1x689ZRzSiyZ-MIKS1bodu7t-vA1ujjIporG1bVqXRijzFkhKOFAJvJuJk0fYuydl11fNar_lhjkjzS5LyUu5Cxtwm-OxaNunP2Dfy2RA2o0ZtM</recordid><startdate>20110328</startdate><enddate>20110328</enddate><creator>Su, Shaojian</creator><creator>Cheng, Buwen</creator><creator>Xue, Chunlai</creator><creator>Wang, Wei</creator><creator>Cao, Quan</creator><creator>Xue, Haiyun</creator><creator>Hu, Weixuan</creator><creator>Zhang, Guangze</creator><creator>Zuo, Yuhua</creator><creator>Wang, Qiming</creator><scope>CGR</scope><scope>CUY</scope><scope>CVF</scope><scope>ECM</scope><scope>EIF</scope><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope></search><sort><creationdate>20110328</creationdate><title>GeSn p-i-n photodetector for all telecommunication bands detection</title><author>Su, Shaojian ; Cheng, Buwen ; Xue, Chunlai ; Wang, Wei ; Cao, Quan ; Xue, Haiyun ; Hu, Weixuan ; Zhang, Guangze ; Zuo, Yuhua ; Wang, Qiming</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3520-24b312ca5771183cbc0d8cd56a56cfcecb50f877b34fbf0fdf46643d37719d7d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Equipment Design</topic><topic>Equipment Failure Analysis</topic><topic>Germanium - chemistry</topic><topic>Light</topic><topic>Photometry - instrumentation</topic><topic>Semiconductors</topic><topic>Telecommunications - instrumentation</topic><topic>Tin - chemistry</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Su, Shaojian</creatorcontrib><creatorcontrib>Cheng, Buwen</creatorcontrib><creatorcontrib>Xue, Chunlai</creatorcontrib><creatorcontrib>Wang, Wei</creatorcontrib><creatorcontrib>Cao, Quan</creatorcontrib><creatorcontrib>Xue, Haiyun</creatorcontrib><creatorcontrib>Hu, Weixuan</creatorcontrib><creatorcontrib>Zhang, Guangze</creatorcontrib><creatorcontrib>Zuo, Yuhua</creatorcontrib><creatorcontrib>Wang, Qiming</creatorcontrib><collection>Medline</collection><collection>MEDLINE</collection><collection>MEDLINE (Ovid)</collection><collection>MEDLINE</collection><collection>MEDLINE</collection><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><jtitle>Optics express</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Su, Shaojian</au><au>Cheng, Buwen</au><au>Xue, Chunlai</au><au>Wang, Wei</au><au>Cao, Quan</au><au>Xue, Haiyun</au><au>Hu, Weixuan</au><au>Zhang, Guangze</au><au>Zuo, Yuhua</au><au>Wang, Qiming</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>GeSn p-i-n photodetector for all telecommunication bands detection</atitle><jtitle>Optics express</jtitle><addtitle>Opt Express</addtitle><date>2011-03-28</date><risdate>2011</risdate><volume>19</volume><issue>7</issue><spage>6400</spage><epage>6405</epage><pages>6400-6405</pages><issn>1094-4087</issn><eissn>1094-4087</eissn><abstract>Using a 820 nm-thick high-quality Ge0.97Sn0.03 alloy film grown on Si(001) by molecular beam epitaxy, GeSn p-i-n photodectectors have been fabricated. The detectors have relatively high responsivities, such as 0.52 A/W, 0.23 A/W, and 0.12 A/W at 1310 nm, 1540 nm, and 1640 nm, respectively, under a 1 V reverse bias. With a broad detection spectrum (800-1800 nm) covering the whole telecommunication windows and compatibility with conventional complementary metal-oxide-semiconductors (CMOS) technology, the GeSn devices are attractive for applications in both optical communications and optical interconnects.</abstract><cop>United States</cop><pmid>21451667</pmid><doi>10.1364/OE.19.006400</doi><tpages>6</tpages><oa>free_for_read</oa></addata></record> |
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| ispartof | Optics express, 2011-03, Vol.19 (7), p.6400-6405 |
| issn | 1094-4087 1094-4087 |
| language | eng |
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| source | EZB-FREE-00999 freely available EZB journals |
| subjects | Equipment Design Equipment Failure Analysis Germanium - chemistry Light Photometry - instrumentation Semiconductors Telecommunications - instrumentation Tin - chemistry |
| title | GeSn p-i-n photodetector for all telecommunication bands detection |
| url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-09T14%3A08%3A36IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=GeSn%20p-i-n%20photodetector%20for%20all%20telecommunication%20bands%20detection&rft.jtitle=Optics%20express&rft.au=Su,%20Shaojian&rft.date=2011-03-28&rft.volume=19&rft.issue=7&rft.spage=6400&rft.epage=6405&rft.pages=6400-6405&rft.issn=1094-4087&rft.eissn=1094-4087&rft_id=info:doi/10.1364/OE.19.006400&rft_dat=%3Cproquest_cross%3E859743603%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c3520-24b312ca5771183cbc0d8cd56a56cfcecb50f877b34fbf0fdf46643d37719d7d3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=859743603&rft_id=info:pmid/21451667&rfr_iscdi=true |