The interaction of Xe and Xe + K with graphene

We have investigated the electronic properties of monolayer graphene with adsorbed layers of xenon or potassium, or a combination of the two. The formation of the first Xe layer is characterized by a dipole polarization which is quenched by a second Xe layer. By comparing K on Xe on graphene to K on...

Full description

Saved in:
Bibliographic Details
Published in:Journal of electron spectroscopy and related phenomena 2011, Vol.183 (1), p.118-124
Main Authors: Bostwick, Aaron, McChesney, Jessica L., Ohta, Taisuke, Emtsev, Konstantin V., Seyller, Thomas, Horn, Karsten, Rotenberg, Eli
Format: Article
Language:English
Subjects:
Doped graphene
Epitaxial graphene
Graphene
Rare-gas adsorption
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We have investigated the electronic properties of monolayer graphene with adsorbed layers of xenon or potassium, or a combination of the two. The formation of the first Xe layer is characterized by a dipole polarization which is quenched by a second Xe layer. By comparing K on Xe on graphene to K on bare graphene, we determine the K contribution to trigonal warping and mass renormalization due to electron–phonon coupling. The former is found to be small but significant, while the latter is shown to be negligible. Thus, previously determined values of electron–phonon coupling for K on graphene are shown to be intrinsic to doped graphene and not determined by the proximity of K ions to the graphene.
ISSN:0368-2048
1873-2526
DOI:10.1016/j.elspec.2010.05.003