Low-Temperature, High-Performance, Solution-Processed Indium Oxide Thin-Film Transistors

Solution-processed In2O3 thin-film transistors (TFTs) were fabricated by a spin-coating process using a metal halide precursor, InCl3, dissolved in acetonitrile. A thin and uniform film can be controlled and formed by adding ethylene glycol. The synthesized In2O3 thin films were annealed at various...

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Bibliographic Details
Published in:Journal of the American Chemical Society 2011-04, Vol.133 (14), p.5166-5169
Main Authors: Han, Seung-Yeol, Herman, Gregory S, Chang, Chih-hung
Format: Article
Language:English
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Summary:Solution-processed In2O3 thin-film transistors (TFTs) were fabricated by a spin-coating process using a metal halide precursor, InCl3, dissolved in acetonitrile. A thin and uniform film can be controlled and formed by adding ethylene glycol. The synthesized In2O3 thin films were annealed at various temperatures ranging from 200 to 600 °C in air or in an O2/O3 atmospheric environment. The TFTs annealed at 500 °C under air exhibited a high field-effect mobility of 55.26 cm2 V−1 s−1 and an I on/I off current ratio of 107. In2O3 TFTs annealed under an O2/O3 atmosphere at temperatures from 200 to 300 °C exhibited excellent n-type transistor behaviors with field-effect mobilities of 0.85−22.14 cm2 V−1 s−1 and I on/I off ratios of 105−106. The annealing atmosphere of O2/O3 elevates solution-processed In2O3 TFTs to higher performance at lower processing temperature.
ISSN:0002-7863
1520-5126
DOI:10.1021/ja104864j