Metallic transport in a monatomic layer of in on a silicon surface

We have succeeded in detecting metallic transport in a monatomic layer of In on an Si(111) surface, Si(111)-sqrt[7]×sqrt[3]-In surface reconstruction, using the micro-four-point probe method. The In layer exhibited conductivity higher than the minimum metallic conductivity (the Ioffe-Regel criterion...

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Bibliographic Details
Published in:Physical review letters 2011-03, Vol.106 (11), p.116802-116802, Article 116802
Main Authors: Yamazaki, Shiro, Hosomura, Yoshikazu, Matsuda, Iwao, Hobara, Rei, Eguchi, Toyoaki, Hasegawa, Yukio, Hasegawa, Shuji
Format: Article
Language:English
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Summary:We have succeeded in detecting metallic transport in a monatomic layer of In on an Si(111) surface, Si(111)-sqrt[7]×sqrt[3]-In surface reconstruction, using the micro-four-point probe method. The In layer exhibited conductivity higher than the minimum metallic conductivity (the Ioffe-Regel criterion) and kept the metallic temperature dependence of resistivity down to 10 K. This is the first example of a monatomic layer, with the exception of graphene, showing metallic transport without carrier localization at cryogenic temperatures. By introducing defects on this surface, a metal-insulator transition occurred due to Anderson localization, showing hopping conduction.
ISSN:0031-9007
1079-7114
DOI:10.1103/physrevlett.106.116802