Comprehensive Study on the Bias-Dependent Equivalent-Circuit Elements Affected by PECVD SiN Passivation in AlGaN/GaN HEMTs

In this paper, a comprehensive study on the effect of plasma-enhanced chemical-vapor-deposited SiN surface passivation on the bias-dependent small-signal equivalent-circuit elements is carried out for AlGaN/GaN high-electron mobility transistors on a high-resistivity silicon substrate. The direct-cu...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2011-02, Vol.58 (2), p.473-479
Main Authors: Zhi Hong Liu, Geok Ing Ng, Arulkumaran, S, Ye Kyaw Thu Maung, Khoon Leng Teo, Siew Chuen Foo, Sahmuganathan, V
Format: Article
Language:English
Subjects:
Aluminum gallium nitride
Aluminum gallium nitrides
Devices
Drains
Equivalence
Equivalent-circuit parameters (ECPs)
Gallium nitride
Gallium nitrides
GaN
HEMTs
High electron mobility transistors
high-electron mobility transistor (HEMT)
Logic gates
MODFETs
Passivation
Semiconductor devices
Silicon compounds
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Summary:In this paper, a comprehensive study on the effect of plasma-enhanced chemical-vapor-deposited SiN surface passivation on the bias-dependent small-signal equivalent-circuit elements is carried out for AlGaN/GaN high-electron mobility transistors on a high-resistivity silicon substrate. The direct-current and small-signal performance of the device was found to be improved by surface passivation. The small-signal equivalent-circuit parameters at various gate and drain biases were extracted, and the physical mechanisms of their bias-dependent behaviors before and after passivation are discussed in detail.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2010.2093144