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High Performance of AlGaN/GaN HEMTs Reported on Adhesive Flexible Tape
In this letter, for the first time to our knowledge, high dc characteristics of AlGaN/GaN/silicon high-electron-mobility transistors transferred onto a thermally enhanced adhesive flexible tape are reported. Transmission line method (TLM) pattern supported on a flexible tape under 0.5% strain exhibi...
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Published in: | IEEE electron device letters 2011-02, Vol.32 (2), p.143-145 |
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Main Authors: | , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | In this letter, for the first time to our knowledge, high dc characteristics of AlGaN/GaN/silicon high-electron-mobility transistors transferred onto a thermally enhanced adhesive flexible tape are reported. Transmission line method (TLM) pattern supported on a flexible tape under 0.5% strain exhibits a high current density of 260 mA/mm. DC measurements performed on a representative gate-TLM device (L G = 2 μm) on a flexible tape are presented. Under 0.16 % strain, the device exhibits a maximum drain current of 300 mA/mm for a gate bias of 0 V and a drain bias of 3 V and withstands V DS = 18 V. |
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ISSN: | 0741-3106 1558-0563 |
DOI: | 10.1109/LED.2010.2091251 |