Spark protection layers for CMOS pixel anode chips in MPGDs

In this work we have investigated the functioning of high resistivity amorphous silicon and silicon-rich nitride layers as a protection against discharges in Micro-Patterned Gaseous Detectors (MPGDs). When the anode is protected by a high resistivity layer, discharge signals are limited in charge. A...

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Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Accelerators, spectrometers, detectors and associated equipment, 2011-02, Vol.629 (1), p.66-73
Main Authors: Bilevych, Y., Blanco Carballo, V.M., Chefdeville, M., Colas, P., Delagnes, E., Fransen, M., van der Graaf, H., Koppert, W.J.C., Melai, J., Salm, C., Schmitz, J., Timmermans, J., Wyrsch, N.
Format: Article
Language:English
Subjects:
Above IC
Accelerators
Amorphous silicon
Anodes
Anodic protection
Chips
CMOS post-processing
Detectors
Discharges
Electrical resistivity
Micromegas
Microsystems
MPGD
Nitrides
Pixel readout
Radiation detectors
Silicon nitride
Sparks
Timepix
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Summary:In this work we have investigated the functioning of high resistivity amorphous silicon and silicon-rich nitride layers as a protection against discharges in Micro-Patterned Gaseous Detectors (MPGDs). When the anode is protected by a high resistivity layer, discharge signals are limited in charge. A signal reduction is expected when the layers are too thick; simulations presented in this paper indicate that layers up to 10 μm thick can be applied without significantly degrading the detector performance. Layers of amorphous silicon and silicon-rich nitride have been deposited on top of Timepix and Medipix2 chips in GridPix detectors; with this, chips survive naturally occurring as well as intentionally produced discharges.
ISSN:0168-9002
1872-9576
DOI:10.1016/j.nima.2010.11.116