Quantum size effects on excitons in strained InAs/InP quantum dots

Exciton states confined in a strained InAs/InP quantum dot are investigated using variational technique within the single band effective mass approximation. The strain contribution to the potential is determined via deformation potential theory, modified by the strain tensor. Ground state positively...

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Bibliographic Details
Published in:Physica. B, Condensed matter Condensed matter, 2010-11, Vol.405 (22), p.4638-4642
Main Authors: Yoo, ChangKyoo, John Peter, A.
Format: Article
Language:English
Subjects:
Binding energy
Condensed matter
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Excitons
Indium arsenides
Indium phosphides
Mathematical analysis
Physics
Quantum dot
Quantum dots
Strain
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Summary:Exciton states confined in a strained InAs/InP quantum dot are investigated using variational technique within the single band effective mass approximation. The strain contribution to the potential is determined via deformation potential theory, modified by the strain tensor. Ground state positively charged donor exciton binding energy and the interband emission energy are studied with the height and radius of cylindrical quantum dot. The valence band anisotropy is included in our theoretical model by using different hole masses in different spatial directions. The results show that both donor exciton binding energy and the interband emission energy are decreased when the dot radius and the height are decreased and the heavy-hole exciton in a cylindrical quantum wire is more strongly bound than the light-hole exciton.
ISSN:0921-4526
1873-2135
DOI:10.1016/j.physb.2010.08.052