Momentum-dependent resonant inelastic X-ray scattering at the Si K edge of 3C-SiC: A theoretical study on a relation between spectra and valence band dispersion

We theoretically demonstrate that a resonant inelastic X-ray scattering (RIXS) with a sizable momentum transfer can be utilized to study valence band dispersion for broad band materials. We take RIXS at the Si K edge of 3C-SiC as a typical example. The RIXS spectra are calculated by systematically c...

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Bibliographic Details
Published in:Physica. B, Condensed matter Condensed matter, 2010-03, Vol.405 (5), p.1415-1422
Main Authors: Nisikawa, Y., Ibuki, M., Usuda, M.
Format: Article
Language:English
Subjects:
Band mapping
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Dispersions
Electron density of states and band structure of crystalline solids
Electron states
Exact sciences and technology
Inelastic scattering
Mathematical analysis
Momentum dependence
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Other interactions of matter with particles and radiation
Photons
Physics
Resonant inelastic X-ray scattering
Semiconductor compounds
Silicon
Spectra
Valence band
X-ray scattering
X-rays
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Summary:We theoretically demonstrate that a resonant inelastic X-ray scattering (RIXS) with a sizable momentum transfer can be utilized to study valence band dispersion for broad band materials. We take RIXS at the Si K edge of 3C-SiC as a typical example. The RIXS spectra are calculated by systematically changing the transferred momentum, an incident photon polarization and an incident photonenergy, on the basis of an ab initio calculation. We find that the spectra depend heavily on both the transferred momentum and the incident photon polarization, and the peaks in the spectra correspond to the energies of the valence bands. We conclude that the information on the energy dispersion of valence bands can be extracted from the transferred momentum dependence of the RIXS spectra. These findings lead to further application for RIXS when investigating the band structure of broad band materials.
ISSN:0921-4526
1873-2135
DOI:10.1016/j.physb.2009.12.011