Pattern Replication in EUV Interference Lithography

Extreme ultraviolet interference lithography (EUVIL) beamline which employed a single grating was constructed at the BL3 beamline in NewSUBARU synchrotron radiation facility. Bending magnet was attempted as a light source, and Ta layer was employed as an absorber layer of 0th order light in transpar...

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Bibliographic Details
Published in:Journal of Photopolymer Science and Technology 2008/06/24, Vol.21(3), pp.435-438
Main Authors: Suzuki, Shota, Fukushima, Yasuyuki, Ohnishi, Ryuji, Watanabe, Takeo, Kinoshita, Hiroo
Format: Article
Language:English
Subjects:
Bending
chemically amplified resist
EUV resist
Interference
interference lithography
Light sources
Lithography
Photopolymers
Replication
Resists
Synchrotron radiation
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Summary:Extreme ultraviolet interference lithography (EUVIL) beamline which employed a single grating was constructed at the BL3 beamline in NewSUBARU synchrotron radiation facility. Bending magnet was attempted as a light source, and Ta layer was employed as an absorber layer of 0th order light in transparent grating. Using this system, 400-nm L&S resist pattern was replicated on a wafer, which shows possibility of EUV interference lithographic technology employing bending magnet as a light source.
ISSN:0914-9244
1349-6336
1349-6336
DOI:10.2494/photopolymer.21.435