Loading…
Evaluation of Next Generation Fluids for ArF Immersion Lithography Beyond Water
Optical immersion lithography using fluids with refractive indices greater than that of water (1.44) can enable numerical apertures of 1.55 or above for printing sub-45 nm lines. We continue to work on delivering second generation high index immersion fluid technology to extend immersion lithography...
Saved in:
Published in: | Journal of Photopolymer Science and Technology 2007, Vol.20(5), pp.729-738 |
---|---|
Main Authors: | , , , , , , , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Summary: | Optical immersion lithography using fluids with refractive indices greater than that of water (1.44) can enable numerical apertures of 1.55 or above for printing sub-45 nm lines. We continue to work on delivering second generation high index immersion fluid technology to extend immersion lithography. Several fluids have been optimized to meet the required specifications of refractive index (n ≥ 1.64) and absorbance (< 0.10 / cm) at 193 nm. Here, we report on recent processing studies on two of our leading fluid candidates, designated IF132 and IF169. We are developing methods to ensure reproducible, low-absorbance fluid with low particle counts. We have also studied fluid changes on exposure to 193nm laser irradiation, and have quantified both photobleaching and photodarkening processes as a function of a number of fluid and process parameters. Through the development of a Standard Stepper Tool model, we are able to correlate our test system results to those expected in a commercial exposure system. Finally, studies of fluid-resist interactions - including PAG leaching measurements, resist thickness changes, and resist surface residues and defects - are providing valuable information on fluid compatibility with 193nm photoresists, and the effects of fluid purity on such interactions. |
---|---|
ISSN: | 0914-9244 1349-6336 1349-6336 |
DOI: | 10.2494/photopolymer.20.729 |