Spatial point analysis of quantum dot nucleation sites on InAs wetting layer

We perform spatial point analysis of InAs quantum dot (QD) nucleation sites and surface reconstruction domain patterns on an InAs wetting layer to investigate QD nucleation mechanisms in Stranski-Krastanow growth mode. An InAs wetting layer on a GaAs(001) substrate has been observed at 300 °C by usi...

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Bibliographic Details
Published in:Surface science 2011-03, Vol.605 (5), p.L1-L5
Main Authors: Konishi, Tomoya, Tsukamoto, Shiro
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Fluctuation
Indium arsenides
MBE
Nearest-neighbor distance
Nucleation
Physics
Quantum dot
Quantum dots
Reconstruction
Scanning tunneling microscopy
Semiconductor
Spatial point analysis
STM
Wetting
Wetting layer
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Summary:We perform spatial point analysis of InAs quantum dot (QD) nucleation sites and surface reconstruction domain patterns on an InAs wetting layer to investigate QD nucleation mechanisms in Stranski-Krastanow growth mode. An InAs wetting layer on a GaAs(001) substrate has been observed at 300 °C by using in situ scanning tunneling microscopy (STM) preceding QD formation. A nearest-neighbor analysis of the STM images finds that the point pattern of QD precursors is similar to that of (1 × 3)/(2 × 3) surface reconstruction domains which are specific to Ga-rich fluctuation. This provides the evidence that InAs QD nucleation is induced by Ga-rich fluctuation within an InAs wetting layer, as a technical implication for site-controlled QD growth for various QD devices.
ISSN:0039-6028
1879-2758
DOI:10.1016/j.susc.2010.12.034