Simulation of silicon diffusion in GaAs

The simulation of coupled diffusion of silicon atoms and point defects in GaAs has been carried out for diffusion at the temperatures of 1000 and 850 °C. The amphoteric behavior of silicon atoms in GaAs has been taken into account in the investigation of high concentration diffusion from silicon lay...

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Bibliographic Details
Published in:Physica. B, Condensed matter Condensed matter, 2011-03, Vol.406 (5), p.1065-1069
Main Authors: Saad, A.M., Velichko, O.I.
Format: Article
Language:English
Subjects:
Condensed matter
Condensed matter: structure, mechanical and thermal properties
Defects and impurities in crystals
microstructure
Diffusion
Diffusion in solids
Diffusion of impurities
Doping and impurity implantation in iii-v and ii-vi semiconductors
Exact sciences and technology
Gallium arsenide
Gallium arsenides
Mathematical models
Physics
Silicon
Silicon substrates
Simulation
Structure of solids and liquids
crystallography
Thermal diffusion
Transport properties of condensed matter (nonelectronic)
Vacancy
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Summary:The simulation of coupled diffusion of silicon atoms and point defects in GaAs has been carried out for diffusion at the temperatures of 1000 and 850 °C. The amphoteric behavior of silicon atoms in GaAs has been taken into account in the investigation of high concentration diffusion from silicon layer deposited on GaAs substrate. The calculated dopant profiles agree well with the experimental ones and they confirm the adequacy of the model of silicon diffusion used for simulation. A comparison with the experimental data has enabled this work to obtain the parameters of silicon effective diffusivity and other values describing high concentration silicon diffusion in GaAs.
ISSN:0921-4526
1873-2135
DOI:10.1016/j.physb.2010.11.082