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Simulation of silicon diffusion in GaAs
The simulation of coupled diffusion of silicon atoms and point defects in GaAs has been carried out for diffusion at the temperatures of 1000 and 850 °C. The amphoteric behavior of silicon atoms in GaAs has been taken into account in the investigation of high concentration diffusion from silicon lay...
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| Published in: | Physica. B, Condensed matter Condensed matter, 2011-03, Vol.406 (5), p.1065-1069 |
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| Main Authors: | , |
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| Language: | English |
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| container_end_page | 1069 |
| container_issue | 5 |
| container_start_page | 1065 |
| container_title | Physica. B, Condensed matter |
| container_volume | 406 |
| creator | Saad, A.M. Velichko, O.I. |
| description | The simulation of coupled diffusion of silicon atoms and point defects in GaAs has been carried out for diffusion at the temperatures of 1000 and 850
°C. The amphoteric behavior of silicon atoms in GaAs has been taken into account in the investigation of high concentration diffusion from silicon layer deposited on GaAs substrate. The calculated dopant profiles agree well with the experimental ones and they confirm the adequacy of the model of silicon diffusion used for simulation. A comparison with the experimental data has enabled this work to obtain the parameters of silicon effective diffusivity and other values describing high concentration silicon diffusion in GaAs. |
| doi_str_mv | 10.1016/j.physb.2010.11.082 |
| format | article |
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| identifier | ISSN: 0921-4526 |
| ispartof | Physica. B, Condensed matter, 2011-03, Vol.406 (5), p.1065-1069 |
| issn | 0921-4526 1873-2135 |
| language | eng |
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| source | ScienceDirect Journals |
| subjects | Condensed matter Condensed matter: structure, mechanical and thermal properties Defects and impurities in crystals microstructure Diffusion Diffusion in solids Diffusion of impurities Doping and impurity implantation in iii-v and ii-vi semiconductors Exact sciences and technology Gallium arsenide Gallium arsenides Mathematical models Physics Silicon Silicon substrates Simulation Structure of solids and liquids crystallography Thermal diffusion Transport properties of condensed matter (nonelectronic) Vacancy |
| title | Simulation of silicon diffusion in GaAs |
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