Electrically driven lasing in light-emitting devices composed of n-ZnO and p-Si nanowires

Electrically driven lasing was demonstrated in light-emitting devices composed of n-ZnO and p-Si nanowires (NWs). The ZnO NWs were synthesized by thermal chemical vapor deposition and the Si NWs were formed by crystallographic wet etching of a Si wafer. The p-n heterojunction devices were constructe...

Full description

Saved in:
Bibliographic Details
Published in:Nanotechnology 2011-06, Vol.22 (24), p.245203-245203
Main Authors: Kim, Kwangeun, Moon, Taeho, Kim, Jeongyong, Kim, Sangsig
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Electrically driven lasing was demonstrated in light-emitting devices composed of n-ZnO and p-Si nanowires (NWs). The ZnO NWs were synthesized by thermal chemical vapor deposition and the Si NWs were formed by crystallographic wet etching of a Si wafer. The p-n heterojunction devices were constructed using the NWs by the direct transfer and dielectrophoresis methods. At an excitation current of 2 µA, the electroluminescence spectrum showed lasing behavior, and this phenomenon was explained by the ZnO-nanostructure-related cavity property.
ISSN:0957-4484
1361-6528
DOI:10.1088/0957-4484/22/24/245203