A stacked memory device on logic 3D technology for ultra-high-density data storage

We have demonstrated, for the first time, a novel three-dimensional (3D) memory chip architecture of stacked-memory-devices-on-logic (SMOL) achieving up to 95% of cell-area efficiency by directly building up memory devices on top of front-end CMOS devices. In order to realize the SMOL, a unique 3D F...

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Bibliographic Details
Published in:Nanotechnology 2011-06, Vol.22 (25), p.254006-254006
Main Authors: Kim, Jiyoung, Hong, Augustin J, Kim, Sung Min, Shin, Kyeong-Sik, Song, Emil B, Hwang, Yongha, Xiu, Faxian, Galatsis, Kosmas, Chui, Chi On, Candler, Rob N, Choi, Siyoung, Moon, Joo-Tae, Wang, Kang L
Format: Article
Language:English
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Summary:We have demonstrated, for the first time, a novel three-dimensional (3D) memory chip architecture of stacked-memory-devices-on-logic (SMOL) achieving up to 95% of cell-area efficiency by directly building up memory devices on top of front-end CMOS devices. In order to realize the SMOL, a unique 3D Flash memory device and vertical integration structure have been successfully developed. The SMOL architecture has great potential to achieve tera-bit level memory density by stacking memory devices vertically and maximizing cell-area efficiency. Furthermore, various emerging devices could replace the 3D memory device to develop new 3D chip architectures.
ISSN:0957-4484
1361-6528
DOI:10.1088/0957-4484/22/25/254006