Graphene transport at high carrier densities using a polymer electrolyte gate

We report the study of graphene devices in Hall-bar geometry, gated with a polymer electrolyte. High densities of 6×1013/cm2 are consistently reached, significantly higher than with conventional back-gating. The mobility follows an inverse dependence on density, which can be correlated to a dominant...

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Bibliographic Details
Published in:Europhysics letters 2010-10, Vol.92 (2), p.27001
Main Authors: Pachoud, A, Jaiswal, M, Ang, P. K, Loh, K. P, Özyilmaz, B
Format: Article
Language:English
Subjects:
72.80.Vp
73.40.Mr
73.63.-b
Density
Electrical resistivity
Electrolytes
Graphene
Inverse
Origins
Scattering
Transport
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Summary:We report the study of graphene devices in Hall-bar geometry, gated with a polymer electrolyte. High densities of 6×1013/cm2 are consistently reached, significantly higher than with conventional back-gating. The mobility follows an inverse dependence on density, which can be correlated to a dominant scattering from weak scatterers. Furthermore, our measurements show a Bloch-Grüneisen regime until 100 K (at 6.2×1013/cm2), consistent with an increase of the density. Ubiquitous in our experiments is a small upturn in resistivity around 3×1013/cm2, whose origin is discussed. We identify two potential causes for the upturn: the renormalization of Fermi velocity and an electrochemically enhanced scattering rate.
ISSN:0295-5075
1286-4854
DOI:10.1209/0295-5075/92/27001