Reproducible resistance switching for BaTiO3 thin films fabricated by RF-magnetron sputtering

• Published in: Thin solid films 2011-03, Vol.519 (10), p.3291-3294
• Main Authors: Jung, Chang Hwa, Woo, Seong Ihl, Kim, Yun Seok, No, Kwang Soo
• Format: Article
• Language: English
• Subjects: Barium titanates; Chromium; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Deposition by sputtering; Devices; Electric potential; Electrical properties of specific thin films; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport phenomena in thin films and low-dimensional structures; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Platinum; Switching; Thin films; Voltage
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2010.12.149

BaTiO3 (BTO) thin film was fabricated to investigate its non-volatile and reversible resistance switching phenomena by RF-sputtering method. The reversible resistance switching phenomenon was observed by DC voltage sweep and Pt/BTO/Pt metal-insulator-metal structure devices showed the bipolar resistance switching such as Pr0.7Ca0.3MnO3 and Cr-doped SrTiO3. The typical leakage current-voltage characteristic measurements were performed. High resistance state (HRS) and low resistance state (LRS) were maintained without power supply. The margin of the resistance between HRS and LRS is considerable during 120th cycles. The current emission mechanisms were suggested by double logarithm plot of leakage current vs. voltage. The comparison of the spreading current mapping images for two different resistance states showed that local conduction path was formed at LRS and was destroyed at HRS.