Effect of porogen residue on electrical characteristics of ultra low- k materials

Porogen residue (sp 2 hybridized carbon) formed during UV curing of low- k materials increases leakage current and decreases breakdown voltage of low- k materials. The amount of porogen residue increases with increasing porosity of PECVD low- k films because of larger amount of co-deposited porogen....

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Bibliographic Details
Published in:Microelectronic engineering 2011-06, Vol.88 (6), p.990-993
Main Authors: Baklanov, Mikhail R., Zhao, Larry, Besien, Els Van, Pantouvaki, Marianna
Format: Article
Language:English
Subjects:
Applied sciences
Breakdown
Carbon
Chemical vapor deposition
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science
rheology
Electric potential
Electronics
Exact sciences and technology
Leakage current
Low- k
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Methods of nanofabrication
Microelectronic fabrication (materials and surfaces technology)
Nanocrystals
Physics
Porogen residue
Porosity
Porous materials
granular materials
Residues
Self-assembly
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Specific materials
Voltage
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Summary:Porogen residue (sp 2 hybridized carbon) formed during UV curing of low- k materials increases leakage current and decreases breakdown voltage of low- k materials. The amount of porogen residue increases with increasing porosity of PECVD low- k films because of larger amount of co-deposited porogen. Electrical characteristics of PECVD ultra low- k films are significantly worse in comparison with CVD and SOG low- k film prepared without porogen. SOG low- k films prepared by self-assembling of nanocrystalline silica demonstrate very low leakage current. Removal of porogen residue significantly improves the electrical characteristics. Therefore, preparation of porogen residue free low- k films is an important challenge of future scaling of low- k materials.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2010.12.077