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TiAlN coatings deposited by triode magnetron sputtering varying the bias voltage
► TiAlN coatings composition is strongly influenced by the Ar/N2 ratio in a sputtering system. ► An increase in the bias voltage could not produce an increase in the TiAlN film thickness. ► The bias voltage has strong influence on the coefficient of crystallographic texture. TiAlN films were deposit...
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Published in: | Applied surface science 2011-05, Vol.257 (14), p.6181-6185 |
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Main Authors: | , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | ► TiAlN coatings composition is strongly influenced by the Ar/N2 ratio in a sputtering system. ► An increase in the bias voltage could not produce an increase in the TiAlN film thickness. ► The bias voltage has strong influence on the coefficient of crystallographic texture.
TiAlN films were deposited on AISI O1 tool steel using a triode magnetron sputtering system. The bias voltage effect on the composition, thickness, crystallography, microstructure, hardness and adhesion strength was investigated. The coatings thickness and elemental composition analyses were carried out using scanning electron microscopy (SEM) together with energy dispersive X-ray (EDS). The re-sputtering effect due to the high-energy ions bombardment on the film surface influenced the coatings thickness. The films crystallography was investigated using X-ray diffraction characterization. The X-ray diffraction (XRD) data show that TiAlN coatings were crystallized in the cubic NaCl B1 structure, with orientations in the {1
1
1}, {2
0
0} {2
2
0} and {3
1
1} crystallographic planes. The surface morphology (roughness and grain size) of TiAlN coatings was investigated by atomic force microscopy (AFM). By increasing the substrate bias voltage from −40 to −150
V, hardness decreased from 32
GPa to 19
GPa. Scratch tester was used for measuring the critical loads and for measuring the adhesion. |
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ISSN: | 0169-4332 1873-5584 |
DOI: | 10.1016/j.apsusc.2011.02.027 |