ZnO:Co diluted magnetic semiconductor or hybrid nanostructure for spintronics?

We have studied the influence of intrinsic and extrinsic defects in the magnetic and electrical transport properties of Co-doped ZnO thin films. X-ray absorption measurements show that Co substitute Zn in the ZnO structure and it is in the 2+ oxidation state. Magnetization (M) measurements show that...

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Bibliographic Details
Published in:Journal of materials science 2010-11, Vol.45 (22), p.6174-6178
Main Authors: Golmar, F., Villafuerte, M., Mudarra Navarro, A., Rodríguez Torres, C. E., Barzola-Quiquia, J., Esquinazi, P., Heluani, S. P.
Format: Article
Language:English
Subjects:
Antiferromagnetism
Characterization and Evaluation of Materials
Chemistry and Materials Science
Classical Mechanics
Crystallography and Scattering Methods
Magnetic properties
Magnetic semiconductors
Magnetization
Materials Science
Nanostructure
Oxidation
Polymer Sciences
Solid Mechanics
Spintronics
Thin films
Transition metals
Transport properties
Valence
X ray absorption
X-rays
Zinc oxide
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Summary:We have studied the influence of intrinsic and extrinsic defects in the magnetic and electrical transport properties of Co-doped ZnO thin films. X-ray absorption measurements show that Co substitute Zn in the ZnO structure and it is in the 2+ oxidation state. Magnetization (M) measurements show that doped samples are mainly paramagnetic. From M vs. H loops measured at 5 K we found that the values of the orbital L and spin S numbers are between 1 and 1.3 for L and S = 3/2, in agreement with the representative values for isolated Co 2+. The obtained negative values of the Curie–Weiss temperatures indicate the existence of antiferromagnetic interactions between transition metal atoms.
ISSN:0022-2461
1573-4803
DOI:10.1007/s10853-010-4710-2