Comparative Study of Self-Sputtering Effects of Different Boron-Based Low-Energy Doping Techniques

Angle-resolved X-ray photoelectron spectroscopy method was used to study self-sputtering effects of different p-type (boron-based) low-energy doping techniques, including conventional monoatomic 11 B beam-line ion implant, molecular beam-line ion implants, cluster B beam-line ion implant, and plasma...

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Bibliographic Details
Published in:IEEE transactions on plasma science 2009-09, Vol.37 (9), p.1760-1766
Main Authors: Shu Qin, Zhuang, K., Shifeng Lu, Hu, Y.J., McTeer, A.
Format: Article
Language:English
Subjects:
Angle-resolved X-ray photoelectron spectroscopy (ARXPS)
Atomic force microscopy
Boron
Clusters
Comparative studies
Deposition
Doping
Implants
Ions
Metrology
Plasma
Plasma applications
plasma doping (PLAD)
Reactive ion etching
reactive ion etching (RIE)
Scanning electron microscopy
self-sputtering
Semiconductor doping
Spectroscopy
Spectrum analysis
Sputter etching
Sputtering
Surface roughness
Transmission electron microscopy
X-rays
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Summary:Angle-resolved X-ray photoelectron spectroscopy method was used to study self-sputtering effects of different p-type (boron-based) low-energy doping techniques, including conventional monoatomic 11 B beam-line ion implant, molecular beam-line ion implants, cluster B beam-line ion implant, and plasma doping (PLAD). It has been found that the self-sputtering effects of the beam-line implants correlate with the mass of ion species except for BF 2 implant. Cluster B implant shows severe self-sputtering effect and surface roughness due to its very heavy and very large cluster ions. BF 2 implant shows severe sputtering/etching effect but comparable roughness due to a combination of the physical sputtering and reactive ion etching. PLAD processes using B 2 H 6 and BF 3 gas species have no sputtering effects but have deposition under certain process conditions.
ISSN:0093-3813
1939-9375
DOI:10.1109/TPS.2009.2028143