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Microwave assisted chemical bath deposited polyaniline films for supercapacitor application

► Synthesis of PANI thin films by MW-CBD method on conducting substrate. ► A maximum specific capacitance of 753 F g −1 with 80% stability over 2000 cycles is observed. ► A specific power of 980 W kg −1 and specific energy of 28.3 Wh kg −1 is observed. In the present investigation, we are reporting...

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Bibliographic Details
Published in:Journal of alloys and compounds 2011-04, Vol.509 (16), p.5064-5069
Main Authors: Deshmukh, P.R., Pusawale, S.N., Jamadade, V.S., Patil, U.M., Lokhande, C.D.
Format: Article
Language:English
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Summary:► Synthesis of PANI thin films by MW-CBD method on conducting substrate. ► A maximum specific capacitance of 753 F g −1 with 80% stability over 2000 cycles is observed. ► A specific power of 980 W kg −1 and specific energy of 28.3 Wh kg −1 is observed. In the present investigation, we are reporting the first time synthesis of polyaniline (PANI) thin films by microwave assisted chemical bath deposition (MW-CBD) method on the stainless steel substrate. The PANI thin films are prepared by the oxidation of aniline in the domestic microwave oven working with frequency 2.45 GHz. The PANI thin films are characterized for their structural, morphological and optical studies by means of X-ray diffraction (XRD), Fourier transform infrared (FT-IR) spectroscopy, scanning electron microscopy (SEM) and UV–vis spectrophotometer. The wettability study is carried out by measuring the contact angle. The supercapacitive behavior of PANI electrode is studied in 0.5 M H 2SO 4 using cyclic voltammetric (CV) measurements. The X-ray diffraction pattern showed the films are amorphous. Morphological study revealed PANI thin film is well covered over the entire substrate surface with less overgrown fine spherical granules. The optical band gap of PANI thin film is found to be 2.5 eV. The hydrophilic nature of the PANI thin films is observed from water contact angle measurement. A maximum specific capacitance is found to be 753 F g −1 at the scan rate of 5 mV s −1.
ISSN:0925-8388
1873-4669
DOI:10.1016/j.jallcom.2010.12.009