Preparation of Inclusion and Precipitate Free Semi-Insulating CdTe

Annealing conditions used for the preparation of semi-insulating CdTe after elimination of inclusions and precipitates are discussed. Second phase defects are eliminated by post-growth stoichiometric annealing and the semi-insulating CdTe is prepared by re-annealing under Te or Cd overpressure. In c...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2009-08, Vol.56 (4), p.1758-1762
Main Authors: Belas, E., Bugar, M., Grill, R., Franc, J., Hoschl, P.
Format: Article
Language:English
Subjects:
Annealing
Cadmium
Cadmium tellurides
CdTe
Conducting materials
Conductivity
Contracts
Crystalline materials
Crystals
diffusion
Electrical resistivity
Gamma ray detectors
Inclusions
Overpressure
Phase detection
Precipitates
Precipitation
Tellurium
Temperature measurement
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Summary:Annealing conditions used for the preparation of semi-insulating CdTe after elimination of inclusions and precipitates are discussed. Second phase defects are eliminated by post-growth stoichiometric annealing and the semi-insulating CdTe is prepared by re-annealing under Te or Cd overpressure. In case of In-doped samples with high In concentration, semi-insulating CdTe with resistivity approximately 10 9 Omegacm was prepared by annealing under Te overpressure. In-situ high temperature measurement of the electrical conductivity and Hall coefficient is used to find annealing conditions for undoped and slightly In-doped CdTe. The dominant extrinsic acceptor level with a concentration of N A = 4 times 10 15 cm -3 was determined and Cd-rich annealing was used for the preparation of semi-insulating CdTe.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2009.2019596