Impact of Proton Irradiation-Induced Bulk Defects on Gate-Lag in GaN HEMTs

The relationship between proton-induced defects and gate-lag in GaN high-electron mobility transistors (HEMTs) is examined using simulations and experiments. Surface traps are primarily responsible for the pre-irradiation gate-lag. Experimental data and detailed two-dimensional device simulations de...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2009-12, Vol.56 (6), p.3192-3195
Main Authors: Kalavagunta, A., Silvestri, M., Beck, M.J., Dixit, S.K., Schrimpf, R.D., Reed, R.A., Fleetwood, D.M., Shen, L., Mishra, U.K.
Format: Article
Language:English
Subjects:
Aluminum gallium nitride
Deep-level traps
Defects
Degradation
Devices
displacement damage
Electron traps
Gallium nitride
Gallium nitrides
GaN
HEMTs
high electron mobility transistor (HEMT)
High electron mobility transistors
MODFETs
polarization charge
proton radiation
Protons
Pulse measurements
Radio frequency
Semiconductor devices
Simulation
Transistors
Two dimensional
Voltage
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Summary:The relationship between proton-induced defects and gate-lag in GaN high-electron mobility transistors (HEMTs) is examined using simulations and experiments. Surface traps are primarily responsible for the pre-irradiation gate-lag. Experimental data and detailed two-dimensional device simulations demonstrate that bulk traps increase the amount of observed gate-lag after irradiation to high-proton fluences.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2009.2034156