Prototype Design of a Thin-Film Bulk Acoustic-Wave Resonator by the Finite Element Method

A thin film bulk acoustic wave resonator (FBAR) used in the RF frequency region of a few gigahertz is considered and its impedance is evaluated by using a harmonic analysis with the three-dimensional finite element method. In particular, the spurious characteristics caused by variations in the elect...

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Bibliographic Details
Published in:IEEE transactions on magnetics 2009-03, Vol.45 (3), p.1116-1119
Main Authors: De Santis, V., Feliziani, M., Buccella, C., Tognolatti, P.
Format: Article
Language:English
Subjects:
Acoustic waves
Acoustics
Cross-disciplinary physics: materials science
rheology
Design engineering
Electrodes
Exact sciences and technology
Film bulk acoustic resonators
Film bulk acoustic wave resonator (FBAR)
finite element analysis
Finite element method
Finite element methods
Fourier analysis
Harmonic analysis
Impedance
Magnetism
Materials science
Mathematical analysis
Methods of deposition of films and coatings
film growth and epitaxy
multiphysics
Other topics in materials science
Physics
piezoelectric material
Prototypes
Radio frequency
Resonance
Resonators
Thin films
Transistors
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Description
Summary:A thin film bulk acoustic wave resonator (FBAR) used in the RF frequency region of a few gigahertz is considered and its impedance is evaluated by using a harmonic analysis with the three-dimensional finite element method. In particular, the spurious characteristics caused by variations in the electrode area, as well as all the resonant modes and the mode shapes are analyzed. A design procedure is presented by using a prediction software tool. An experimental prototype is built and the measured results are compared to the numerical ones.
ISSN:0018-9464
1941-0069
DOI:10.1109/TMAG.2009.2012646