InGaAs-InP avalanche photodiodes with dark current limited by generation-recombination

Separate absorption grading charge multiplication avalanche photodiodes (SAGCM APDs) are widely accepted in photon starved optical communication systems due to the presence of large photocurrent gain. In this work, we present a detailed analysis of dark currents of planar-type SAGCM InGaAs-InP APDs...

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Bibliographic Details
Published in:Optics express 2011-04, Vol.19 (9), p.8546-8556
Main Authors: Zhao, Yanli, Zhang, Dongdong, Qin, Long, Tang, Qi, Wu, Rui Hua, Liu, Jianjun, Zhang, Youping, Zhang, Hong, Yuan, Xiuhua, Liu, Wen
Format: Article
Language:English
Subjects:
Arsenicals - chemistry
Equipment Design
Equipment Failure Analysis
Gallium - chemistry
Indium - chemistry
Phosphines - chemistry
Photometry - instrumentation
Semiconductors
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Summary:Separate absorption grading charge multiplication avalanche photodiodes (SAGCM APDs) are widely accepted in photon starved optical communication systems due to the presence of large photocurrent gain. In this work, we present a detailed analysis of dark currents of planar-type SAGCM InGaAs-InP APDs with different thicknesses of multiplication layer. The effect of the diffusion process, the generation-recombination process, the tunneling process and the multiplication process on the total leakage current is discussed. A new empirical formula has been established to predict the optimal multiplication layer thickness of SAGCM APDs with dark current limited by generation-recombination at multiplication gain of 8.
ISSN:1094-4087
1094-4087
DOI:10.1364/OE.19.008546