Micrometer-Scale Ballistic Transport in Encapsulated Graphene at Room Temperature

Devices made from graphene encapsulated in hexagonal boron-nitride exhibit pronounced negative bend resistance and an anomalous Hall effect, which are a direct consequence of room-temperature ballistic transport at a micrometer scale for a wide range of carrier concentrations. The encapsulation make...

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Bibliographic Details
Published in:Nano letters 2011-06, Vol.11 (6), p.2396-2399
Main Authors: Mayorov, Alexander S, Gorbachev, Roman V, Morozov, Sergey V, Britnell, Liam, Jalil, Rashid, Ponomarenko, Leonid A, Blake, Peter, Novoselov, Kostya S, Watanabe, Kenji, Taniguchi, Takashi, Geim, A. K
Format: Article
Language:English
Subjects:
Boron Compounds - chemistry
Electronics
Graphite - chemistry
Surface Properties
Temperature
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Summary:Devices made from graphene encapsulated in hexagonal boron-nitride exhibit pronounced negative bend resistance and an anomalous Hall effect, which are a direct consequence of room-temperature ballistic transport at a micrometer scale for a wide range of carrier concentrations. The encapsulation makes graphene practically insusceptible to the ambient atmosphere and, simultaneously, allows the use of boron nitride as an ultrathin top gate dielectric.
ISSN:1530-6984
1530-6992
DOI:10.1021/nl200758b