High-performance GaN metal-insulator-semiconductor ultraviolet photodetectors using gallium oxide as gate layer

In this study, gallium nitride (GaN)-based metal-insulator-semiconductor (MIS) ultraviolet (UV) photodetectors (PDs) with a gallium oxide (GaO(x)) gate layer formed by alternating current bias-assisted photoelectrochemical oxidation of n-GaN are presented. By introducing the GaO(x) gate layer to the...

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Bibliographic Details
Published in:Optics express 2011-06, Vol.19 (13), p.12658-12663
Main Authors: Lee, Ming-Lun, Mue, T S, Huang, F W, Yang, J H, Sheu, J K
Format: Article
Language:English
Subjects:
Electronics
Gallium - chemistry
Optical Devices
Optics and Photonics - instrumentation
Optics and Photonics - methods
Photochemical Processes
Semiconductors
Ultraviolet Rays
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Summary:In this study, gallium nitride (GaN)-based metal-insulator-semiconductor (MIS) ultraviolet (UV) photodetectors (PDs) with a gallium oxide (GaO(x)) gate layer formed by alternating current bias-assisted photoelectrochemical oxidation of n-GaN are presented. By introducing the GaO(x) gate layer to the GaN MIS UV PDs, the leakage current is reduced and a much larger UV-to-visible rejection ratio (R(UV/vis)) of spectral responsivity is achieved. In addition, a bias-dependent spectral response results in marked increase of the R(UV/vis) with bias voltage up to ~10(5). The bias-dependent responsivity suggests the possible existence of internal gain in of the GaN MIS PDs.
ISSN:1094-4087
1094-4087
DOI:10.1364/OE.19.012658