Influence of process parameters on structure and optical properties of GeC thin films deposited by RF magnetron sputtering

Germanium carbide (Ge 1 − x C x) films on silicon and quartz substrates have been prepared by the radio frequency (RF) reactive sputtering of a pure Ge target in a CH 4/Ar discharge. Their structural and optical properties have been investigated as functions of the substrate temperature (T S) and th...

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Bibliographic Details
Published in:Thin solid films 2011-04, Vol.519 (12), p.4101-4104
Main Authors: Zoita, C.N., Grigorescu, C.E.A., Vasiliu, I.C., Feraru, I.D.
Format: Article
Language:English
Subjects:
Carbides
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Deposition
Deposition by sputtering
Exact sciences and technology
Germanium
Germanium carbide coatings
Inverse
Magnetron sputtering
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Optical properties
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Physics
Radio frequencies
Silicon substrates
Structure
Thin films
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Summary:Germanium carbide (Ge 1 − x C x) films on silicon and quartz substrates have been prepared by the radio frequency (RF) reactive sputtering of a pure Ge target in a CH 4/Ar discharge. Their structural and optical properties have been investigated as functions of the substrate temperature (T S) and the CH 4 percentage to the gas mixture. The optical band gap of the films lies within the range 0.96–1.65 eV, varying proportionally with the carbon content and in inverse proportionality with T S.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2011.01.204