Terahertz optical-Hall effect for multiple valley band materials: n-type silicon

The optical-Hall effect comprises generalized ellipsometry at long wavelengths on samples with free-charge carriers placed within external magnetic fields. Measurement of the anisotropic magneto-optic response allows for the determination of the free-charge carrier properties including spatial aniso...

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Bibliographic Details
Published in:Thin solid films 2011-02, Vol.519 (9), p.2613-2616
Main Authors: Kühne, P., Hofmann, T., Herzinger, C.M., Schubert, M.
Format: Article
Language:English
Subjects:
Anisotropic effective mass
Anisotropy
Carrier density
Carriers
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport phenomena in thin films and low-dimensional structures
Ellipsometry
Exact sciences and technology
Frequency domain
Instruments, apparatus, components and techniques common to several branches of physics and astronomy
Maxima
Minima
Optical instruments, equipment and techniques
Optical-Hall effect
Physics
Polarimeters and ellipsometers
Silicon
Surface and interface electron states
Surface states, band structure, electron density of states
Terahertz frequencies
THz
Valleys
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Summary:The optical-Hall effect comprises generalized ellipsometry at long wavelengths on samples with free-charge carriers placed within external magnetic fields. Measurement of the anisotropic magneto-optic response allows for the determination of the free-charge carrier properties including spatial anisotropy. In this work we employ the optical-Hall effect at terahertz frequencies for analysis of free-charge carrier properties in multiple valley band materials, for which the optical free-charge carrier contributions originate from multiple Brillouin-zone conduction or valence band minima or maxima, respectively. We investigate exemplarily the room temperature optical-Hall effect in low phosphorous-doped n-type silicon where free electrons are located in six equivalent conduction-band minima near the X-point. We simultaneously determine their free-charge carrier concentration, mobility, and longitudinal and transverse effective mass parameters.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2010.11.087