Superconducting Test Cavity With Dielectric Concentrator for High Q, High Surface Field

A superconducting test cavity and cryostat are being developed to support the testing of round wafer samples of new superconducting materials. The cavity is designed to test these samples in surface fields up to and beyond the BCS limit of Nb. The design is optimized to produce maximum surface field...

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Bibliographic Details
Published in:IEEE transactions on applied superconductivity 2009-06, Vol.19 (3), p.1409-1411
Main Authors: Pogue, N., Blackburn, R., McIntyre, P., Sattarov, A.
Format: Article
Language:English
Subjects:
Acceleration
Applied sciences
Capacitors. Resistors. Filters
Cavity
Compound structure devices
dielectric
Dielectrics
Electric breakdown
Electrical engineering. Electrical power engineering
Electromagnets
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Exact sciences and technology
Hemispheres
heterostructure
Holes
linac
Linear particle accelerator
Materials testing
microwave
Niobium
Sapphire
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Superconducting films
Superconducting materials
Superconducting microwave devices
Superconductivity
Surface resistance
Various equipment and components
Wafers
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Summary:A superconducting test cavity and cryostat are being developed to support the testing of round wafer samples of new superconducting materials. The cavity is designed to test these samples in surface fields up to and beyond the BCS limit of Nb. The design is optimized to produce maximum surface field on the sample compared with that elsewhere in the cavity. It operates in the TE 011 mode. A dielectric hemisphere of low-loss sapphire is located just above the wafer surface and serves to concentrate the surface field. The sapphire is cooled by a column of superfluid He, with sufficient heat transport to maintain high Q throughout the rf pulse. It should be possible to test a sample to twice the BCS limit of Nb while measuring the rf surface resistance of the sample.
ISSN:1051-8223
1558-2515
DOI:10.1109/TASC.2009.2018312