High Characteristic Temperature of Highly Stacked Quantum-Dot Laser for 1.55- \mu m Band

We fabricated broad-area laser diodes comprising 30-layer stacks of InAs quantum dots (QDs) by using strain compensation. The devices exhibited ground-state lasing at 1529 nm in pulsed mode with a high characteristic temperature of 113 K around room temperature (20°C-80°C). Ground-state lasing was a...

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Bibliographic Details
Published in:IEEE photonics technology letters 2010-01, Vol.22 (2), p.103-105
Main Authors: Akahane, K., Yamamoto, N., Kawanishi, T.
Format: Article
Language:English
Subjects:
Capacitive sensors
Characteristic temperature
Compensation
Conferences
Density
Fiber optics
Indium phosphide
Laser modes
Laser stability
Lasing
Lattices
Optical fibers
quantum dot (QD)
Quantum dot lasers
Quantum dots
Semiconductor lasers
Stacking
stacking strain compensation
Strain
Substrates
Temperature
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Summary:We fabricated broad-area laser diodes comprising 30-layer stacks of InAs quantum dots (QDs) by using strain compensation. The devices exhibited ground-state lasing at 1529 nm in pulsed mode with a high characteristic temperature of 113 K around room temperature (20°C-80°C). Ground-state lasing was achieved because of the high QD density afforded by strain compensation.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2009.2035821