High-Speed CMOS Integrated Optical Receiver With an Avalanche Photodetector

We present a high-speed monolithically integrated optical receiver fabricated with 0.13-mum standard complementary metal-oxide-semiconductor (CMOS) technology. The optical receiver consists of a CMOS-compatible avalanche photodetector (CMOS-APD) and a transimpedance amplifier (TIA). The CMOS-APD pro...

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Bibliographic Details
Published in:IEEE photonics technology letters 2009-10, Vol.21 (20), p.1553-1555
Main Authors: Youn, J.-S., Kang, H.-S., Lee, M.-J., Park, K.-Y., Choi, W.-Y.
Format: Article
Language:English
Subjects:
Avalanche photodetectors (APDs)
Avalanches
Bandwidth
Capacitance
CMOS
CMOS technology
complementary metal-oxide-semiconductor (CMOS) integrated optical receiver
High speed
High speed optical techniques
Integrated optics
Optical amplifiers
Optical receivers
Parasitic capacitance
Photodetectors
Receivers
Semiconductor optical amplifiers
Stimulated emission
transimpedance amplifier (TIA)
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Summary:We present a high-speed monolithically integrated optical receiver fabricated with 0.13-mum standard complementary metal-oxide-semiconductor (CMOS) technology. The optical receiver consists of a CMOS-compatible avalanche photodetector (CMOS-APD) and a transimpedance amplifier (TIA). The CMOS-APD provides high responsivity as well as large bandwidth. Its bandwidth is further enhanced by the TIA having negative capacitance, which compensates undesired parasitic capacitance. With the CMOS integrated optical receiver, 4.25-Gb/s optical data are successfully transmitted with a bit-error rate less than 10 -12 at the incident optical power of - 5.5 dBm.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2009.2029869