Reliable Assessment of Progressive Breakdown in Ultrathin MOS Gate Oxides Toward Accurate TDDB Evaluation

Progressive breakdown (PBD), which is now considered a key feature in the breakdown of ultrathin gate oxides, was investigated to help develop a reliable time-dependent-dielectric-breakdown qualification. In particular, this paper focused on treating multiple competing breakdown phenomena (multiple-...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2011-05, Vol.58 (5), p.1468-1475
Main Authors: Tsujikawa, S, Kanno, M, Nagashima, N
Format: Article
Language:English
Subjects:
Applied sciences
Assessments
Breakdown
Data mining
Devices
Electric breakdown
Electronics
Exact sciences and technology
Gate oxides
Gates
hard breakdown (HBD)
Life cycle assessment
Logic gates
Metal oxide semiconductors
MOSFETs
Oxides
Particle measurements
progressive breakdown (PBD)
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Shape
soft breakdown (SBD)
Time measurement
time-dependent dielectric breakdown (TDDB)
Transistors
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Summary:Progressive breakdown (PBD), which is now considered a key feature in the breakdown of ultrathin gate oxides, was investigated to help develop a reliable time-dependent-dielectric-breakdown qualification. In particular, this paper focused on treating multiple competing breakdown phenomena (multiple-BD). By using metal-oxide-semiconductor transistors with extremely small gate areas, the effect of the multiple-BD was clearly revealed. Through PBD assessments that excluded the multiple-BD effect and also the influence of measurement time-step limitations, a reliable hard-breakdown lifetime qualification process was demonstrated.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2011.2114349