Seamless On-Wafer Integration of Si(100) MOSFETs and GaN HEMTs

The first on-wafer integration of Si(100) MOSFETs and AlGaN/GaN high electron mobility transistors (HEMTs) is demonstrated. To enable a fully Si-compatible process, we fabricated a novel Si(100)-GaN-Si(100) virtual substrate through a wafer bonding and etch-back technique. The high thermal stability...

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Bibliographic Details
Published in:IEEE electron device letters 2009-10, Vol.30 (10), p.1015-1017
Main Authors: Chung, J.W., Jae-kyu Lee, Piner, E.L., Palacios, T.
Format: Article
Language:English
Subjects:
Aluminum gallium nitride
Applied sciences
Design. Technologies. Operation analysis. Testing
Devices
Electronics
Etching
Exact sciences and technology
Fabrication
Gallium nitride
Gallium nitrides
GaN
HEMTs
heterogeneous integration
high electron mobility transistor (HEMT)
High electron mobility transistors
Integrated circuits
metal-oxide-semiconductor field-effect transistor (MOSFET)
Microelectronic fabrication (materials and surfaces technology)
MODFETs
MOSFETs
Nitrides
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductors
Silicon substrates
Substrates
Thermal stability
Transistors
virtual substrate
Wafer bonding
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Summary:The first on-wafer integration of Si(100) MOSFETs and AlGaN/GaN high electron mobility transistors (HEMTs) is demonstrated. To enable a fully Si-compatible process, we fabricated a novel Si(100)-GaN-Si(100) virtual substrate through a wafer bonding and etch-back technique. The high thermal stability of nitride semiconductors allowed the fabrication of Si MOSFETs on this substrate without degrading the performance of the GaN epilayers. After the Si devices were fabricated, the nitride epilayer is exposed, and the nitride transistors are processed. By using this technology, GaN and Si devices separated by less than 5 mum from each other have been fabricated, which is suitable for building future heterogeneous integrated circuits.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2009.2027914