Microwave Modulators Based on 4H-SiC p-i-n Diodes

• Published in: IEEE transactions on microwave theory and techniques 2008-04, Vol.56 (4), p.803-808
• Main Authors: Zekentes, K., Camara, N., Basanets, V.V., Boltovets, M.S., Kryvutsa, V.A., Orechovskij, V.O., Simonchuk, V.I., Zorenko, A.V., Bano, E.
• Format: Article
• Language: English
• Subjects: Applied sciences; Capacitance; Circuit properties; Communication switching; Diodes; Electric potential; Electric, optical and optoelectronic circuits; Electronic circuits; Electronics; Engineering Sciences; Exact sciences and technology; Fabrication; Frequency; Frequency ranges; Insertion loss; isolation; Micro and nanotechnologies; Microelectronics; Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits; Microwave devices; microwave modulators; Microwaves; Modulators; Noise levels; p-i-n diode; P-i-n diodes; Power semiconductor switches; Propagation losses; Silicon carbide; switches; Switching, multiplexing, switched capacity circuits; Transmission loss; Voltage
• ISSN: 0018-9480; 1557-9670
• DOI: 10.1109/TMTT.2008.918168

Multidiode broadband microwave signal modulators based on 4H-SiC p-i-n diodes were fabricated and fully characterized for the first time. The diodes used for the modulator fabrication exhibited a blocking voltage of 1100 V, a 100-mA differential resistance of 1-3 Omega, a punch-through voltage (100 V) capacitance below 0.5 pF, and a carrier effective lifetime of 15 ns. The three-diode modulators are characterized by a transmission loss of 1-2 dB and isolation of 27-34 dB in the 2-7-GHz frequency range, while their switching speed is as low as 30 ns. Two-diode modulators were specially designed for high-temperature operation. These modulators are characterized by a transmission loss of 1.1-2.6 dB and isolation of 33-44.5 dB in the 2-7-GHz frequency range at temperatures up to 300degC.