AlGaN/GaN HEMT High Power Densities on hbox SiC / hbox SiO 2 /poly-SiC Substrates

In this letter, successful operation at 10 GHz of T-gate HEMTs on epitaxial structures grown by metal-organic chemical vapor deposition (MOCVD) or MBE on composite substrates is demonstrated. The used device fabrication process is very similar to the process used on monocrystalline SiC substrate. Hi...

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Bibliographic Details
Published in:IEEE electron device letters 2009-01, Vol.30 (6)
Main Authors: Defrance, N, Thorpe, J, Douvry, Y, Hoel, V, De Jaeger, JC, Gaquiere, C, Xiao Tang, Xiao Tang, di Forte-Poisson, MA, Langer, R, Rousseau, M, Lahreche, H
Format: Article
Language:English
Subjects:
Density
Devices
Gain
High electron mobility transistors
Molecular beam epitaxy
Noise levels
Semiconductor devices
Silicon carbide
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Summary:In this letter, successful operation at 10 GHz of T-gate HEMTs on epitaxial structures grown by metal-organic chemical vapor deposition (MOCVD) or MBE on composite substrates is demonstrated. The used device fabrication process is very similar to the process used on monocrystalline SiC substrate. High power density was measured on both epimaterials at 10 GHz. The best value is an output power density of 5.06 W/mm associated to a power-added efficiency (PAE) of 34.7% and a linear gain of 11.8 dB at V sub(DS) = 30 V for the components based on MOCVD-grown material. The output power density is 3.58 W/mm with a maximum PAE of 25% and a linear gain around 15 dB at V sub(DS) = 40 V for the MBE-grown material.
ISSN:0741-3106
DOI:10.1109/LED.2009.2019972