Investigation Into the Scalability of Selectively Implanted Buried Subcollector (SIBS) for Submicrometer InP DHBTs

Recent attempts to achieve 400 GHz or higher f T and f MAX with InP heterojunction bipolar transistors (HBTs) have resulted in aggressive scaling into the deep submicrometer regime. In order to alleviate some of the traditional mesa scaling rules, several groups have explored selectively implanted b...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2007-03, Vol.54 (3), p.398-409
Main Authors: Li, James Chingwei, Chow, David H., Asbeck, Peter M., Sokolich, Marko, Royter, Yakov, Hussain, Tahir, Chen, Mary Y., Fields, Charles H., Rajavel, Rajesh D., Bui, Steven S., Shi, Binqiang, Hitko, Donald A.
Format: Article
Language:English
Subjects:
Applied sciences
Bipolar transistors
Double heterojunction bipolar transistors
Electrical resistance measurement
Electronics
Exact sciences and technology
Geometry
heterojunction bipolar transistors (HBTs)
III-V semiconductor materials
indium compounds
Indium phosphide
ion implantation
Microelectronic fabrication (materials and surfaces technology)
Resistance
semiconductor device measurements
Semiconductor diodes
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:Recent attempts to achieve 400 GHz or higher f T and f MAX with InP heterojunction bipolar transistors (HBTs) have resulted in aggressive scaling into the deep submicrometer regime. In order to alleviate some of the traditional mesa scaling rules, several groups have explored selectively implanted buried subcollectors (SIBS) as a means to decouple the intrinsic and extrinsic collector design. This allows tau C to be minimized without incurring a large total C BC increase, and hence, a net improvement in f T and f MAX is achieved. This paper represents the first investigation into the series resistance and capacitance characteristics of submicrometer-width SIBS regions (as narrow as 350 nm) for InP double HBTs. Although the SIBS resistance is higher than that of epitaxially grown layers, the SIBS concept is able to provide good dopant activation and a significant decrease in C BC . S-parameter measurements are presented to clarify the impact of SIBS geometry variations, caused by both intentional device design and process variations, on f T and f MAX . Parasitic resistances and high background doping limit the f T improvement, but the C BC reduction is sufficient to demonstrate a 30% increase in f MAX . Results indicate that further improvements in f T and f MAX using the SIBS concept will be possible
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2006.890370