Nonlinear Characterization and Modeling of Carbon Nanotube Field-Effect Transistors

We report for the first time to our knowledge large-signal measurements performed at 600 MHz and in time domain on carbon nanotube field-effect transistors (CNFETs) using a large-signal network analyzer. To overcome the very high mismatch between the high CNFET impedance and the basic 50-Omega confi...

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 2008-07, Vol.56 (7), p.1505-1510
Main Authors: Curutchet, A., Theron, D., Werquin, M., Ducatteau, D., Happy, H., Dambrine, G., Bethoux, J.M., Derycke, V., Gaquiere, C.
Format: Article
Language:English
Subjects:
Applied sciences
Carbon nanotube field-effect transistor (CNFET)
Carbon nanotubes
Circuits
CNTFETs
Computer simulation
Electric, optical and optoelectronic circuits
Electron mobility
Electronics
Engineering Sciences
Exact sciences and technology
FETs
Impedance
Instruments
Laboratories
large-signal network analyzer (LSNA)
Microwave devices
Microwaves
Molecular electronics, nanoelectronics
neuronal modeler
nonlinear model
Nonlinearity
Oxidation
Radio frequency
Self-assembly
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Theoretical study. Circuits analysis and design
Transistors
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Summary:We report for the first time to our knowledge large-signal measurements performed at 600 MHz and in time domain on carbon nanotube field-effect transistors (CNFETs) using a large-signal network analyzer. To overcome the very high mismatch between the high CNFET impedance and the basic 50-Omega configuration of the setup, the output impedance was matched with the help of an experimental active load-pull configuration. Hence, we were able to observe under large-signal conditions the nonlinear behavior of CNFETs. Static measurements and continuous-wave S ij -parameter measurements were made for many different biases. They were used in order to determine a nonlinear electrical model that has been validated thanks to the nonlinear measurements. The developed model opens the way for electrical CNFET circuit simulation and nonlinear applications of these devices.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.2008.925209