Optimization of on-State and Switching Performances for 15a20-kV 4H-SiC IGBTs

The 4H-SiC p-channel IGBTs designed to block 15 and 20 kV are optimized for minimum loss (on-state plus switching power) by adjusting the parameters of the JFET region, drift layer, and buffer layer, using 2-D MEDICI simulations. Switching loss exhibits a strong dependence on buffer layer thickness,...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on electron devices 2008-01, Vol.55 (8)
Main Authors: Tamaki, T, Walden, G G, Sui, Yang, Cooper, JA
Format: Article
Language:English
Subjects:
Blocking
Buffer layers
Drift
JFET
MOSFETs
Optimization
Simulation
Switching
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The 4H-SiC p-channel IGBTs designed to block 15 and 20 kV are optimized for minimum loss (on-state plus switching power) by adjusting the parameters of the JFET region, drift layer, and buffer layer, using 2-D MEDICI simulations. Switching loss exhibits a strong dependence on buffer layer thickness, doping, and lifetime due to their influence on the current tail. In contrast, drift layer lifetime has little effect on the crossover frequency at which the MOSFET and IGBT have equal loss.
ISSN:0018-9383
DOI:10.1109/TED.2008.926965