Amorphous Inclusions in Irradiated Silicon and Their Effects on Material and Device Properties

Clustered damage plays an important role in determining the electronic properties of silicon irradiated with particles having a relatively high rate of nonionizing energy loss. This damage has generally been treated as being heavily defected crystal, but substantial evidence points to amorphization....

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2008-12, Vol.55 (6), p.2992-2999
Main Authors: Palko, J.W., Srour, J.R.
Format: Article
Language:English
Subjects:
Amorphous materials
Atomic layer deposition
Atomic measurements
Crystalline materials
Damage
Defect clusters
Devices
displacement damage
Dominance
Electronic properties
Energy loss
Inclusions
Irradiation
molecular dynamics
Production
Protons
Radiation effects
Silicon
Thermal degradation
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Summary:Clustered damage plays an important role in determining the electronic properties of silicon irradiated with particles having a relatively high rate of nonionizing energy loss. This damage has generally been treated as being heavily defected crystal, but substantial evidence points to amorphization. The structure of radiation-produced amorphous regions in silicon is modeled here using atomistic techniques. Those regions consist of a phase distinct from the surrounding crystal, and models based on amorphous inclusions can explain the dominance of clusters in determining key electronic properties in irradiated bulk material and devices.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2008.2006751