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Amorphous Inclusions in Irradiated Silicon and Their Effects on Material and Device Properties
Clustered damage plays an important role in determining the electronic properties of silicon irradiated with particles having a relatively high rate of nonionizing energy loss. This damage has generally been treated as being heavily defected crystal, but substantial evidence points to amorphization....
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| Published in: | IEEE transactions on nuclear science 2008-12, Vol.55 (6), p.2992-2999 |
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| Main Authors: | , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c353t-eed81f886e58f909341a28cfd0889d1cbef43d0dce069a69a35c31af919ab68a3 |
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| cites | cdi_FETCH-LOGICAL-c353t-eed81f886e58f909341a28cfd0889d1cbef43d0dce069a69a35c31af919ab68a3 |
| container_end_page | 2999 |
| container_issue | 6 |
| container_start_page | 2992 |
| container_title | IEEE transactions on nuclear science |
| container_volume | 55 |
| creator | Palko, J.W. Srour, J.R. |
| description | Clustered damage plays an important role in determining the electronic properties of silicon irradiated with particles having a relatively high rate of nonionizing energy loss. This damage has generally been treated as being heavily defected crystal, but substantial evidence points to amorphization. The structure of radiation-produced amorphous regions in silicon is modeled here using atomistic techniques. Those regions consist of a phase distinct from the surrounding crystal, and models based on amorphous inclusions can explain the dominance of clusters in determining key electronic properties in irradiated bulk material and devices. |
| doi_str_mv | 10.1109/TNS.2008.2006751 |
| format | article |
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| fulltext | fulltext |
| identifier | ISSN: 0018-9499 |
| ispartof | IEEE transactions on nuclear science, 2008-12, Vol.55 (6), p.2992-2999 |
| issn | 0018-9499 1558-1578 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_875052817 |
| source | IEEE Electronic Library (IEL) Journals |
| subjects | Amorphous materials Atomic layer deposition Atomic measurements Crystalline materials Damage Defect clusters Devices displacement damage Dominance Electronic properties Energy loss Inclusions Irradiation molecular dynamics Production Protons Radiation effects Silicon Thermal degradation |
| title | Amorphous Inclusions in Irradiated Silicon and Their Effects on Material and Device Properties |
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