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A 1.8-GHz CMOS Power Amplifier Using a Dual-Primary Transformer With Improved Efficiency in the Low Power Region

A 1.8-GHz CMOS power amplifier for a polar transmitter is implemented with a 0.18- RF CMOS process. The matching components, including the input and output transformers, were integrated. A dual-primary transformer is proposed in order to increase the efficiency in the low power region of the amplifi...

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 2008-04, Vol.56 (4), p.782-792
Main Authors: PARK, Changkun, HAN, Jeonghu, KIM, Haksun, HONG, Songcheol
Format: Article
Language:English
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Summary:A 1.8-GHz CMOS power amplifier for a polar transmitter is implemented with a 0.18- RF CMOS process. The matching components, including the input and output transformers, were integrated. A dual-primary transformer is proposed in order to increase the efficiency in the low power region of the amplifier. The loss induced by the matching network for the low-output power region is minimized using the dual-primary transformer. The amplifier achieved a power-added efficiency of 40.7% at a maximum output power of 31.6 dBm. The dynamic range was 34 dB for a supply voltage that ranged from 0.5 to 3.3 V. The low power efficiency was 32% at the output power of 16 dBm.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.2008.918152