Abrupt Delta-Doped InP/GaInAs/InP DHBTs With 0.45-[Formula Omitted]-Wide T-Shaped Emitter Contacts

An abrupt pulse-doped InP/GaInAs/InP double heterojunction bipolar transistor having a 0.45- mum-wide T- shaped emitter metal is reported. These two promising technologies for sub-100-nm emitters were previously demonstrated only for 1- mum emitters. The device exhibited typical dc and microwave per...

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Bibliographic Details
Published in:IEEE electron device letters 2008-09, Vol.29 (9), p.971-973
Main Authors: Cohen Elias, D, Gavrilov, A, Cohen, S, Kraus, S, Sayag, A, Ritter, D
Format: Article
Language:English
Subjects:
Devices
Direct current
Emittance
Emitters (electron)
Heterojunction bipolar transistors
Indium phosphides
Microwaves
Semiconductor devices
Online Access:Get full text
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Summary:An abrupt pulse-doped InP/GaInAs/InP double heterojunction bipolar transistor having a 0.45- mum-wide T- shaped emitter metal is reported. These two promising technologies for sub-100-nm emitters were previously demonstrated only for 1- mum emitters. The device exhibited typical dc and microwave performance to 0.5- mum emitter devices.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2008.2001738