On an InGaP/InGaAs Double Channel Pseudomorphic High Electron Mobility Transistor With Graded Triple [Formula Omitted]-Doped Sheets

An interesting InGaP/InGaAs double channel pseudomorphic high electron mobility transistor is fabricated and demonstrated. Due to the employed InGaP Schottky and buffer layers, InGaAs double channel structure, and graded triple delta-doped sheets, both DC and RF performances are improved. From exper...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2008-11, Vol.55 (11), p.3310
Main Authors: Chen, Li-Yang, Cheng, Shiou-Ying, Chen, Tzu-Pin, Chu, Kuei-Yi, Tsai, Tsung-Han, Liu, Yi-Chun, Liao, Xin-Da, Liu, Wen-Chau
Format: Article
Language:English
Subjects:
Channels
Devices
Direct current
High electron mobility transistors
Indium gallium arsenides
Oscillations
Semiconductor devices
Semiconductors
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Summary:An interesting InGaP/InGaAs double channel pseudomorphic high electron mobility transistor is fabricated and demonstrated. Due to the employed InGaP Schottky and buffer layers, InGaAs double channel structure, and graded triple delta-doped sheets, both DC and RF performances are improved. From experimental results, the studied device, with a gate dimension of 0.8 x 100 mum super(2) , shows a drain saturation current of 176 mA/mm, a maximum extrinsic transconductance of 176 mS/mm, a unity current gain cutoff frequency of 16 GHz, and a maximum oscillation frequency of 33.2 GHz at room temperature. Moreover, a theoretical analysis based on a 2-D semiconductor simulation package is used to study the device properties and compare the experimental results. Good agreement between the theoretical analyses and experimental results is found.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2008.2005126