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Effect of deposition temperature and quality of free-standing diamond substrates on the properties of RF sputtering ZnO films
Highly c-axis oriented ZnO film is often deposited on diamond substrates by RF magnetron sputtering and widely used for high frequency surface acoustic wave (SAW) devices. Deposition temperature is a key factor affecting the quality of the ZnO film. Different quality polished free-standing diamond f...
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Published in: | Diamond and related materials 2011-04, Vol.20 (4), p.527-531 |
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Main Authors: | , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Highly c-axis oriented ZnO film is often deposited on diamond substrates by RF magnetron sputtering and widely used for high frequency surface acoustic wave (SAW) devices. Deposition temperature is a key factor affecting the quality of the ZnO film. Different quality polished free-standing diamond films prepared by DC Arc Plasma Jet were used as the substrates to deposit ZnO films at different temperatures. Effect of the deposition temperature and the quality of the diamond films on the properties of the ZnO films were investigated by means of scanning electron microscopy (SEM) and X-ray diffraction (XRD). The results show that highly c-axis oriented ZnO films can be much easier deposited on the optical-grade diamond films with <
111> preferred orientation than the tool-grade diamond films with <
220> preferred orientation. The optimal deposition temperature is 200
°C for highly c-axis oriented and lower roughness ZnO films. Acoustic phase velocity of more than 10,000
m/s for the SAW devices based on the ZnO/optical-grade free-standing diamond films was obtained.
► Tool-grade and optical-grade CVD diamond as substrates of ZnO film deposition. ► Tool-grade CVD diamond benefits oriented growth of ZnO film. ► Higher temperature will disturb oriented growth and increase roughness of ZnO film. |
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ISSN: | 0925-9635 1879-0062 |
DOI: | 10.1016/j.diamond.2011.02.006 |