Compact Empirical Modeling of Nonlinear Dynamic Thermal Effects in Electron Devices

An original empirical approach to deal with nonlinear dynamic thermal effects in electron devices is proposed. The new technology-independent approach is very compact and easy to implement in computer-aided design tools. Therefore, it can be easily coupled with electrical device models in order to o...

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 2008-09, Vol.56 (9), p.2017-2024
Main Authors: Melczarsky, I., Lonac, J.A., Filicori, F., Santarelli, A.
Format: Article
Language:English
Subjects:
Application software
Applied sciences
Behavioral modeling
Computer programs
Couplings
Design automation
Devices
Electron devices
Electronics
electrothermal
Electrothermal effects
Empirical analysis
Equations
Exact sciences and technology
FETs
heterojunction bipolar transistors (HBTs)
intermodulation distortion
Mathematical analysis
Mathematical models
Microwave and submillimeter wave devices, electron transfer devices
microwave field-effect transistors (FETs)
Microwaves
modeling
nonlinear
Nonlinear dynamics
Radar applications
Radio frequency
Radiofrequency identification
Radiolocalization and radionavigation
self-heating
semiconductor device thermal factors
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Telecommunications
Telecommunications and information theory
thermal
thermal impedance
Volterra series
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Description
Summary:An original empirical approach to deal with nonlinear dynamic thermal effects in electron devices is proposed. The new technology-independent approach is very compact and easy to implement in computer-aided design tools. Therefore, it can be easily coupled with electrical device models in order to obtain accurate electrothermal models that are suitable for nonconstant-envelope RF applications (e.g., pulsed radar). Model equations and identification procedures are derived in this paper. Validation results and comparison with simplified models are also presented both for a simulated field-effect transistor device, as well as for a real hetero- junction bipolar transistor device.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.2008.2001956