Effects of Film Stress Modulation Using TiN Metal Gate on Stress Engineering and Its Impact on Device Characteristics in Metal Gate/High-[Formula Omitted] Dielectric SOI FinFETs

In this letter, the effects of TiN-induced strain engineering on device characteristics for a metal gate/high-k silicon-on-insulator fin-shaped field-effect transistors were studied. From a convergent-beam electron-diffraction analysis and simulation study, a 3-nm TiN electrode was found to lead to...

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Bibliographic Details
Published in:IEEE electron device letters 2008-05, Vol.29 (5), p.487-490
Main Authors: Kang, Chang Yong, Yang, Ji-Woon, Oh, Jungwoo, Choi, Rino, Suh, Young Jun, Floresca, H.C, Kim, Jiyoung, Kim, Moon, Lee, Byoung Hun, Tseng, Hsing-Huang, Jammy, R
Format: Article
Language:English
Subjects:
Current carriers
Devices
Electrodes
Gates
Modulation
Strain
Stresses
Titanium nitride
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Summary:In this letter, the effects of TiN-induced strain engineering on device characteristics for a metal gate/high-k silicon-on-insulator fin-shaped field-effect transistors were studied. From a convergent-beam electron-diffraction analysis and simulation study, a 3-nm TiN electrode was found to lead to significantly higher tensile stress on the Si substrate than a 20-nm TiN electrode. This high stress-induced fast bulk carrier generation results in the transient current-time characteristics. Therefore, 3- and 20-nm TiN electrodes are the excellent choice for nMOSFETs and pMOSFETs, respectively, which is from the standpoint of strain engineering, threshold voltage (V@@dth@), and performance. Due to the metal-induced strain, I@@ddsat@ improvements of 15% and 12% for nMOSFETs and pMOSFETs, respectively, were achieved.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2008.919782