Highly reliable 1.5-μm DFB laser with high-mesa SIBH structure

The degradation behavior of 1.5-mum uncooled distributed feedback (DFB) lasers with a semi-insulating buried heterostructure during constant-power aging is investigated. Long-term stability is achieved by suppressing the t super(0.5) deterioration in the current increase rate (second-stage degradati...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2007-03, Vol.54 (3), p.456-461
Main Authors: TAKESHITA, Tatsuya, TADOKORO, Takashi, IGA, Ryuzo, TOHMORI, Yuichi, YAMAMOTO, Mitsuo, SUGO, Mitsuru
Format: Article
Language:English
Subjects:
Applied sciences
Compound structure devices
Degradation
Deterioration
Diffusion
Diffusion layers
Digits
Electronics
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Physics
Retarding
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor lasers
laser diodes
Stability
Testing, measurement, noise and reliability
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Description
Summary:The degradation behavior of 1.5-mum uncooled distributed feedback (DFB) lasers with a semi-insulating buried heterostructure during constant-power aging is investigated. Long-term stability is achieved by suppressing the t super(0.5) deterioration in the current increase rate (second-stage degradation). The improvement in reliability is attributed to the fact that some defects on the grating interface are simultaneously suppressed by the mutual diffusion that occurs when growing the SI-InP layer. We realized a DFB laser with high reliability (
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2006.890367